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| savantic semiconductor product specification silicon npn power transistors but11f BUT11AF description with to-220fa package high voltage ,high speed applications converters inverters switching regulators motor control systems pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (tc=25 ) symbol parameter conditions value unit but11f 850 v cbo collector-base voltage BUT11AF open emitter 1000 v but11f 400 v ceo collector-emitter voltage BUT11AF open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current 5 a i cm collector current-peak 10 a i b base current 2 a i bm base current-peak 4 a p tot total power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 3.125 k/w fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors but11f BUT11AF characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit but11f 400 v ceo(sus) collector-emitter sustaining voltage BUT11AF i c =0.1a; i b =0 450 v but11f i c =3a; i b =0.6a v cesat collector-emitter saturation voltage BUT11AF i c =2.5a; i b =0.5a 1.5 v but11f i c =3a; i b =0.6a v besat base-emitter saturation voltage BUT11AF i c =2.5a; i b =0.5a 1.3 v but11f v ce =850v ;v be =0 i ces collector cut-off current BUT11AF v ce =1000v ;v be =0 1.0 ma i ebo emitter cut-off current v eb =9v; i c =0 10 ma h fe-1 dc current gain i c =5ma ; v ce =5v 10 35 h fe-2 dc current gain i c =0.5a ; v ce =5v 10 35 switching times resistive load t on turn-on time 1.0 s t s storage time 4.0 s t f fall time i c =2.5a; i b1 =- i b2 =0.5a v cc =250v;r l =100 b 0.8 s savantic semiconductor product specification 3 silicon npn power transistors but11f BUT11AF package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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